对埋沟电荷耦合器件（CCD）的势阱形成机理进行了描述。

The mechanics of the potential well of buried channel charge coupled device (CCD) are described.

介绍了一种测电荷耦合器件（CCD）调制传递函数（MTF）的新方法。

This paper introduces a new method for measuring modulation transfer function (MTF) of charge coupled devices (CCD).

本文提出了采用电荷耦合器件(CCD)对瞬态信号进行数字存贮的新方案。

This paper presents a new digital memory plan on transient data, in which a charge coupled device (CCD) is used.

用真频传递能力、混淆效应、信息密度等示性参数准确表述了电荷耦合器件的成像特性。

It is proved that rea1 frequency transfer ability, aliasing effect, information density, etc. may be of use for characterising the image-forming CCD.