第一栅极及第二栅极分开配置于所述基底上。

The first gate and the second gate are separately disposed on the substrate.

不同的栅极电压下的温度漂移也不相同。

Temperature drift with different grid voltage is different, too.

在半导体中的源极区和漏极区可以限定晶体管栅极长度。

Source and drain regions in the semiconductor may define a transistor gate length.

传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。

Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.

为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。

In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.