本文提出了一种测量少数载流子寿命的方法。

In this paper showed a measurement method of minority carrier lifetime.

本文简略地介绍处理半导体中热载流子输运的一个解析方法——平衡方程方法。

We give a brief review of a balance-equation approach to hot carrier transport in semiconductors.

分析有源区内载流子和VCL光子密度的变化，揭示了增益钳制的物理机理。

Analyzing the carrier density and photon density of VCL in active region, the physical mechanism of gain clamping was revealed.

本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。

We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.

提出了光导型半导体探测器内载流子输运的动力学模型及方程组，并对方程组进行了数值求解。

A dynamics model and the relevant equations describing transport of photocarriers in PC-type semiconductor detectors are established.